Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures
نویسنده
چکیده
A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic conduction-band. The injection of electrons into silicon dioxide is also investigated in order to extract the thermalization length of electronic carriers.
منابع مشابه
Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields
A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic band-structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic condu...
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تاریخ انتشار 2014